Sheath formation of a plasma containing multiply charged ions, cold and hot electrons, and emitted electrons
Description
It is quite well known that ion confinement is an important factor in an electron cyclotron resonance ion source (ECRIS) as it is closely related to the plasma potential. A model of sheath formation was extended to a plasma containing multiply charged ions (MCIs), cold and hot electrons, and secondary electrons emitted either by MCIs or hot electrons. In the model, a modification of the 'Bohm criterion' was given, the sheath potential drop and the critical emission condition were also analyzed. It appears that the presence of hot electrons and emitted electrons strongly affects the sheath formation so that smaller hot electrons and larger emission current result in reduced sheath potential (or floating potential). However the sheath potential was found to become independent of the emission current J when J > Jc, (where Jc is the critical emission current. The paper is followed by the associated poster
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Additional details
Identifiers
Publishing Information
- Imprint Title
- ECRIS 2010 - Proceedings and Presentations
- Imprint Pagination
- 1120 p.
- Journal Page Range
- p. 803-806
- Report number
- INIS-FR--13-0058
Conference
- Title
- 19. International Workshop on ECR Ion Sources
- Acronym
- ECRIS 2010
- Dates
- 23-26 Aug 2010
- Place
- Grenoble (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 44026138
- Subject category
- S43: PARTICLE ACCELERATORS; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM PRODUCTION; BOHM CRITERION; ECR ION SOURCES; ION BEAMS; MATHEMATICAL MODELS; PLASMA POTENTIAL; PLASMA SHEATH
- Descriptors DEC
- BEAMS; ELECTRIC POTENTIAL; ION SOURCES
Optional Information
- Notes
- 8 refs.; Available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS website for current contact and E-mail addresses: http://www.iaea.org/INIS/contacts/