Published September 2003 | Version v1
Journal article Metadata-only

Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on GaAs substrates

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)

Description

Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates

Additional details

Identifiers

DOI
10.1134/1.1610128;

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
9
Journal Page Range
p. 1104-1106
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35094433
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Translation
Descriptors DEI
ALUMINIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRON MOBILITY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPY; MOBILITY; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 1127-1130 (No. 9, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.