Characterization of silicon implanted with focused ion beam by Raman microprobe

Damage to silicon implanted with Si++, Au++ and Be++ ions using focused ion beams has been evaluated by a Raman microprobe technique. A quantitative evaluation of damage to ion-implanted silicon was made by comparing the intensities of Raman scattering from implanted and unimplanted areas. The minimum dose at which damage is detectable by Raman measurements is 9 x 1011 ions/cm2 for Au++, 7.5 x 1012 ions/cm2 for Si++ and 7.5 x 1013 ions/cm2 for Be++. From the depth distribution of the damage measured using laser lines of different wavelengths, it is inferred that damage at the near-surface region in Be++ implanted silicon is reduced by self annealing during high-dose rate implantation and that a channeling effect causes the saturation dose in Be++ implantation to be higher than that in other ion implantations. (author)