Published February 1972
| Version v1
Journal article
PCD lifetime measurements as a function of temperature in detector-grade and impurity-doped germanium
Description
It is shown, theoretically and experimentally, that PCD lifetime measurements, as a function of temperature in p-Ge, may be used to determine the concentration, the trap energy and capture cross sections for electrons, of single and multilevel impurities.
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 19
- Journal Issue
- 1
- Series
- IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci.
- Journal Page Range
- 279-288
- ISSN
- 0018-9499
Conference
- Title
- Nuclear science symposium.
- Dates
- 3 Nov 1971.
- Place
- San Francisco, Calif.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4041045
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER LIFETIME; CHARGE CARRIERS; GE SEMICONDUCTOR DETECTORS; GERMANIUM; HIGH TEMPERATURE; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; LIFETIME; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent