Operation of ICRF antennas in a full tungsten environment in ASDEX Upgrade
Creators
- 1. MPI fuer Plasmaphysik, Boltzmannstr. 2, D-85748 Garching (Germany)
Description
In the 2007 and early part of 2008 experimental campaigns, ASDEX Upgrade operated with full tungsten (W) wall without boronization. Use of ICRF power results in a significant increase of W source. Low temperature conditions at the plasma facing components, achieved by a large clearance between the separatrix and the antenna (>6 cm) and by elevated gas puff rates (>5x1021s-1) help to lower W sputtering yield during ICRF. Operation of neighboring ICRF antennas at the phase difference close to -90 deg. can lead to a reduction in the W source. However, a reduction of parallel near-fields by antenna design is needed to further minimize the W source. A relation has been established between the HFSS code calculations predicting a dominant role of box currents in the formation of parallel antenna near-fields and the experiment. The shapes of the measured vertical profile of effective sputtering yields and the calculated sheath driving voltages show a qualitative agreement. This confirms that the existing tools are a good basis to design an improved antenna.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2009.01.231Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2009.01.231;
- PII
- S0022-3115(09)00259-1;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 390-391
- Journal Page Range
- p. 900-903
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 18. international conference on plasma-surface interactions in controlled fusion device
- Dates
- 26-30 May 2008
- Place
- Toledo, Castilla-La Mancha (Spain)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41077355
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTENNAS; ASDEX TOKAMAK; DESIGN; ELECTRIC POTENTIAL; FIRST WALL; ICR HEATING; ION CYCLOTRON-RESONANCE; OPERATION; SPUTTERING; TEMPERATURE RANGE 0065-0273 K; TUNGSTEN
- Descriptors DEC
- CLOSED PLASMA DEVICES; CYCLOTRON RESONANCE; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; HEATING; HIGH-FREQUENCY HEATING; METALS; PLASMA HEATING; REFRACTORY METALS; RESONANCE; TEMPERATURE RANGE; THERMONUCLEAR DEVICES; THERMONUCLEAR REACTOR WALLS; TOKAMAK DEVICES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.