Published April 23, 2015 | Version v1
Journal article

Effect of the anisotropy of monocrystalline silicon mechanical properties on the dynamic characteristics of a micromechanical gyroscope

  • 1. Department of Precision Istrument Making, National Research Tomsk Polytechnic University, 30a Lenin ave., Tomsk (Russian Federation)

Description

The aim of the research was to determine the effect of temperature on mechanical properties of a micromechanical gyroscope with the sensing element mounted on a silicon wafer, with the crystallographic orientation of (100) (110) (111). The research is of current relevancy since the metrological characteristics that depend on the eigenfrequencies over the full temperature range are to be controlled. The temperature-modal analysis of the micromechanical gyroscope model was performed with ANSYS program. The temperature dependence for eigenfrequencies was obtained. The dependence of the scale factor on temperature for the most temperature-independent variant of sensor positioning on the wafer was determined. The developed mathematical model was used to find the forms of the output oscillations of the gyroscope. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/81/1/012096

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
81
Journal Issue
1
Journal Page Range
[8 p.]
ISSN
1757-899X

Conference

Title
International scientific conference on radiation-thermal effects and processes in inorganic materials
Dates
3-8 Nov 2014
Place
Tomsk (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47095615
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANISOTROPY; CRYSTALLOGRAPHY; EIGENFREQUENCY; GYROSCOPES; MECHANICAL PROPERTIES; OSCILLATIONS; SENSORS; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
ELEMENTS; SEMIMETALS