Published February 1, 1982
| Version v1
Journal article
Synchrotron x-ray diffraction study of silicon during pulsed laser annealing
Creators
- 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
Description
Time-resolved x-ray diffraction measurements of lattice strain in silicon during pulsed-laser annealing have been made with nanosecond resolution by using synchrotron radiation. Analyses of the strain in pure and boron-implanted silicon in terms of temperature indicate high temperatures and evidence for near-surface melting, in qualitative agreement with the melting model of laser annealing
Additional details
Publishing Information
- Journal Title
- Phys. Rev. Lett.
- Journal Volume
- 48
- Journal Issue
- 5
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 337-340
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13695482
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; BORON; CRYSTAL LATTICES; EXPERIMENTAL DATA; IMPURITIES; ION IMPLANTATION; LASER RADIATION; MELTING; PULSES; SILICON; STRAINS; SYNCHROTRON RADIATION; TEMPERATURE MEASUREMENT; TIME RESOLUTION; X-RAY DIFFRACTION
- Descriptors DEC
- BREMSSTRAHLUNG; COHERENT SCATTERING; CRYSTAL STRUCTURE; DATA; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; INFORMATION; NUMERICAL DATA; PHASE TRANSFORMATIONS; RADIATIONS; RESOLUTION; SCATTERING; SEMIMETALS; TIMING PROPERTIES