Published May 11, 2005 | Version v1
Journal article

Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

Creators

  • 1. LEPSI, IN2P3/ULP, 23 rue du Loess, BP 20, 67037 Strasbourg cedex 02 (France) and Department of Electronics, UST-AGH, al. A. Mickiewicza 30, 30-059 Cracow (Poland)

Description

The first autoradiographic results of the tritium (3H) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (<30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the 1x106 pixel, thinned MIMOSA V chip. The low noise performance and thin (∼160 nm) entrance window provide the sensitivity of the device to energies as low as ∼4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained

Additional details

Identifiers

DOI
10.1016/j.nima.2004.12.024;
PII
S0168-9002(05)00041-0;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
543
Journal Issue
2-3
Journal Page Range
p. 537-548
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.