Published 1981
| Version v1
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Secondary electron emission from silicon irradiated with up to 20 MeV/N multicharged ions
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no abstract available
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13646120.pdf
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Additional details
Additional titles
- Original title (Russian)
- Эмиссия вторичных электронов из кремния, облучаемого многозарядными ионами с энергией до 20 MeV/Н
Publishing Information
- Imprint Title
- Summaries of reports of 31. Conference on nuclear spectroscopy and nuclear structure
- Journal Page Range
- p. 586.
- Report number
- INIS-mf--6819
Conference
- Title
- 31. Conference on nuclear spectroscopy and nuclear structure.
- Dates
- 14 - 16 Apr 1981.
- Place
- Samarkand, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 13646120
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CROSS SECTIONS; ELECTRON EMISSION; ENERGY DEPENDENCE; ION-ATOM COLLISIONS; MEV RANGE 10-100; MONTE CARLO METHOD; MULTICHARGED IONS; SECONDARY EMISSION; SILICON
- Descriptors DEC
- ATOM COLLISIONS; CHARGED PARTICLES; COLLISIONS; ELEMENTS; EMISSION; ENERGY RANGE; ION COLLISIONS; IONS; MEV RANGE; SEMIMETALS
Optional Information
- Notes
- Short note. Imprint:Tezisy dokladov po yadernoj spektroskopii i strukture atomnogo yadra.