Published December 2016
| Version v1
Journal article
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
Creators
- 1. Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)
- 2. National Research Nuclear University MEPhI (Russian Federation)
Description
The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 12
- Journal Page Range
- p. 1641-1646
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48093874
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ELECTRONS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.