Total dose γ-ray radiation characteristics of P-channel MOSFET/FIPOS
Creators
- 1. Fudan Univ., Shanghai (China)
- 2. Academia Sinica, Urumqi (China). Xinjiang Inst. of Physics
Description
The high quality SOI(silicon on insulator) materials were prepared with highly selective and self-stopping full isolation by porous oxidized silicon (FIPOS) technology. The PMOSFETs with different channel lengths wee fabricated by the 2 μm CMOS process on the SOI wafers and their total dose 60Co γ-ray radiation characteristics were studied. The results show that the devices remain functional after 5 kGy(Si) dose radiation, but the threshold voltage has a significant shift. The main factor causing this shift is the radiation-induced trapped-oxide charge in the gate oxide layer. The devices with different channel lengths have similar radiation characteristics. After room-temperature annealing for several hours, the threshold voltage has a little back-shift
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 21
- Journal Issue
- 1
- Journal Page Range
- p. 43-47.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 29019085
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANNEALING; COBALT 60; ELECTRIC POTENTIAL; GAMMA RADIATION; MOSFET; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS; MINUTES LIVING RADIOISOTOPES; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS; YEARS LIVING RADIOISOTOPES