Published May 20, 1997 | Version v1
Journal article

Ion bombardment induced segregation effects in VDx studied by SIMS and SNMS

  • 1. Muenster Univ. (Germany). Inst. fuer Physikalische Chemie
  • 2. Institut fuer Technolgie- und Wissenstransfer, Luebecker Ring 2, D-59494, Soest (Germany)
  • 3. Fachbereich 16 Elektrische Energietechnik der Universitaet-Gesamthochschule Paderborn, D-59494, Soest (Germany)

Description

Secondary ion mass spectrometry (SIMS) and complementary secondary neutral (particle) mass spectrometry (SNMS) investigations on VDx samples were carried out to study deuterium segregation effects induced by ion bombardment. It could be shown that the sputter process causes a distortion of the near-surface region, which leads, due to the extremely high mobility of deuterium in vanadium, to a deuterium segregation to the surface, i.e. a deuterium enrichment in the sputtered area, and at the same time to a deuterium impoverishment in the bulk (secondary preferential sputtering effect). (orig.)

Additional details

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
253-254
Journal Issue
1-2
Journal Page Range
p. 459-462.
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
Fundamentals and applications.
Acronym
International symposium on metal hydrogen systems
Dates
25-30 Aug 1996.
Place
Les Diablerets (Switzerland).

Optional Information

Notes
6 refs.