Published August 28, 2003 | Version v1
Journal article Metadata-only

Transmission electron microscopy study of Au/ZrB2/Ag(Te) contacts to GaSb

Creators

Description

By means of cross-sectional transmission electron microscopy (TEM) the influence of the annealing temperature on the morphology of Au/ZrB2/Ag(Te) ohmic contacts to (1 0 0)-oriented tellurium-doped GaSb substrates has been investigated. Both the shape and the size of the Ag(Te) grains significantly varied with the annealing temperature. In the sample annealed at 250 deg. C, below the Ag(Te)/GaSb interface, dissolution pits (DPs) were formed. At the higher annealing temperatures the DP's were not found. After annealing at 300 deg. C, changes in the Ag(Te) grains located close to the interface can be seen. These changes were not observed in the sample annealed at 350 deg. C. In all samples the annealing caused the formation of microtwins

Additional details

Identifiers

DOI
10.1016/S0254-0584(02)00597-7;
arXiv
arXiv:hep-ph/9604393v1;
PII
S0254058402005977;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
81
Journal Issue
2-3
Journal Page Range
p. 260-264
ISSN
0254-0584
CODEN
MCHPDR

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38075556
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; DISSOLUTION; DOPED MATERIALS; GALLIUM ANTIMONIDES; GOLD; INTERFACES; MORPHOLOGY; SEMICONDUCTOR MATERIALS; TELLURIUM; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM BORIDES
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; BORIDES; BORON COMPOUNDS; ELECTRON MICROSCOPY; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; MICROSCOPY; PNICTIDES; SEMIMETALS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; ZIRCONIUM COMPOUNDS

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Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.