Published June 21, 1996 | Version v1
Patent

LMFBR type reactor

Description

In an LMFBR type reactor, partitions are disposed to a coolant channel at positions lower than the free liquid level, and the width of the partitions is adapted to have a predetermined condition. Namely, when low temperature fluid overflowing the wall of the coolant channel, flows down and collided against the free liquid surface in the coolant channel, since the dropping speed thereof is reduced abruptly, large pressure waves are caused by kinetic force of the low temperature fluid. However, if appropriate numbers of partitions having an appropriate shape are formed, the dropping speed of the low temperature fluid is moderated to reduce the pressure waves. In addition, since the pressure waves are dispersed to the circumferential and lateral directions of the coolant flow channel respectively, the propagation of the pressure waves can be prevented effectively. Further, when the flow of the low temperature fluid is changed to the circumferential direction, for example, by earthquakes, since the partitions act as members resisting against the circumferential change of the low temperature fluid, the change of the direction can be suppressed. (N.H.)

Availability note (English)

Available from JAPIO. Also available from EPO.

Additional details

Publishing Information

Imprint Pagination
11 p.
IPC:
Int. Cl. G21C15/02; G21C1/02.
IPC
Int. Cl. G21C15/02; G21C1/02.
Patent number
JP patent document 8-160178/A/

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
28008863
Subject category
S21: SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
COOLING; EARTHQUAKES; FLUCTUATIONS; FLUIDS; LMFBR TYPE REACTORS; PARTITION; SHOCK WAVES; SURFACES; VELOCITY; WAVE PROPAGATION
Descriptors DEC
BREEDER REACTORS; EPITHERMAL REACTORS; FAST REACTORS; FBR TYPE REACTORS; LIQUID METAL COOLED REACTORS; REACTORS; SEISMIC EVENTS; VARIATIONS

Optional Information

Secondary number(s)
JP patent application 6-298389.