In situ observation of dislocation dynamics at the TOPO-TOMO beamline at the synchrotron light source ANKA
Creators
- 1. Kristallographie, Universitaet Freiburg (Germany)
- 2. RINCE, Dublin City University (Ireland)
- 3. ANKA, ISS, Research Center Karlsruhe (Germany)
- 4. CIT, San Sebastian (Spain)
- 5. Physics Dept., Durham (United Kingdom)
Description
White beam X-ray topography at the Topo-Tomo beamline of the synchrotron light source ANKA (Research Centre Karlsruhe) is used to monitor in situ the origin and the dynamics of dislocations in silicon at high temperatures. The (100)Si sample with well defined, artificial defects from a nanoindenter was heated in a mirror heater up to 1000 C. During the heating the transmission X-ray topographs were taken with a CCD-camera system continuously every second resulting in a movie of the formation and motion of dislocations. It will be shown, that the indents act as the source for dislocation loops. The dislocations move with about 3.4.10-5 m/sec inside two opposite inclined {111} glide planes. Finally slip bands of 60 -dislocations are formed. The experimental details of the high temperature topography, the analysis of dislocations as well as the first results of the dislocation dynamics and slip band formation are presented.
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Regensburg 2010 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature
- Dates
- 21-26 Mar 2010
- Place
- Regensburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 42061571
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DISLOCATIONS; SILICON; SURFACES; TEMPERATURE RANGE 1000-4000 K; X-RAY RADIOGRAPHY
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INDUSTRIAL RADIOGRAPHY; LINE DEFECTS; MATERIALS TESTING; NONDESTRUCTIVE TESTING; SEMIMETALS; TEMPERATURE RANGE; TESTING
Optional Information
- Notes
- Session: MM 48.4 Do 12:45; No further information available