Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS process. This mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gate-oxide reliability that the conventional CMOS I/O buffer has. The design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ∼34% with respect to the product of power consumption and speed.