Published May 1, 2020 | Version v1
Journal article

Maximized lateral inhibition in paired magnetic domain wall racetracks for neuromorphic computing

  • 1. Electrical and Computer Engineering, University of Texas at Austin, Austin, TX (United States)
  • 2. Electrical and Computer Engineering, University of Texas at Dallas, Richardson, TX (United States)
  • 3. Sandia National Laboratory, Albuquerque, NM (United States)

Description

Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to the same layer and prevents them from firing. In most neuromorphic hardware platforms lateral inhibition is implemented by external circuitry, thereby decreasing the energy efficiency and increasing the area overhead of such systems. Recently, the domain wall—magnetic tunnel junction (DW-MTJ) artificial neuron is demonstrated in modeling to be intrinsically inhibitory. Without peripheral circuitry, lateral inhibition in DW-MTJ neurons results from magnetostatic interaction between neighboring neuron cells. However, the lateral inhibition mechanism in DW-MTJ neurons has not been studied thoroughly, leading to weak inhibition only in very closely-spaced devices. This work approaches these problems by modeling current- and field- driven DW motion in a pair of adjacent DW-MTJ neurons. We maximize the magnitude of lateral inhibition by tuning the magnetic interaction between the neurons. The results are explained by current-driven DW velocity characteristics in response to an external magnetic field and quantified by an analytical model. Dependence of lateral inhibition strength on device parameters is also studied. Finally, lateral inhibition behavior in an array of 1000 DW-MTJ neurons is demonstrated. Our results provide a guideline for the optimization of lateral inhibition implementation in DW-MTJ neurons. With strong lateral inhibition achieved, a path towards competitive learning algorithms such as the winner-take-all are made possible on such neuromorphic devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab86e8

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
31
Journal Issue
29
Journal Page Range
[9 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53031354
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ENERGY EFFICIENCY; EQUIPMENT; INHIBITION; INTERACTIONS; LAYERS; MAGNETIC TUNNEL JUNCTIONS; NERVE CELLS; SIMULATION; STATIC MAGNETIC FIELDS
Descriptors DEC
ANIMAL CELLS; EFFICIENCY; MAGNETIC FIELDS; SOMATIC CELLS; TUNNEL JUNCTIONS