Published August 1971 | Version v1
Journal article Metadata-only

Comparing radiation effects in Gunn and IMPATT diodes

Creators

Description

Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPATT diodes.

Additional details

Identifiers

DOI
10.1109/tns.1971.4326375;

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
18
Journal Issue
4
Series
IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci.
Journal Page Range
404-409
ISSN
0018-9499

Conference

Title
4. symposium on engineering problems of fusion research.
Dates
20 Apr 1971.
Place
Washington, D. C.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
4037391
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
GAMMA RADIATION; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTOR DIODES; TRANSISTORS
Descriptors DEC
BARYONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; NUCLEONS; RADIATIONS; SEMICONDUCTOR DEVICES

Optional Information

Notes
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