Published June 2016 | Version v1
Journal article

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

  • 1. National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 (United States)
  • 2. Institute of Microelectronics, Peking University, Beijing 100871 (China)
  • 3. IBM Research, Albany, NY 12205 (United States)
  • 4. Taiwan Semiconductor Manufacturing Corporation, Hsinchu 30844, Taiwan (China)

Description

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger's equation can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
6
Journal Issue
6
Journal Page Range
p. 065212-065212.9
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48057735
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRIC CONTACTS; ELECTRON BEAM INJECTION; ELECTRONS; NANOSTRUCTURES; REFLECTION; SCATTERING; TRANSISTORS; VELOCITY
Descriptors DEC
BEAM INJECTION; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES

Optional Information

Notes
(c) 2016 Author(s)