Published July 16, 2010 | Version v1
Journal article

Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100 keV electron beam lithography

  • 1. Paul Scherrer Institut, Villigen CH-5232 (Switzerland)
  • 2. Department of Chemistry, University of Helsinki, Helsinki FI-00014 (Finland)

Description

We investigated the fabrication of dense, high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures by 100 keV electron beam lithography. The samples were developed using a high contrast developer and supercritically dried in carbon dioxide. Dense gratings with line widths down to 25 nm were patterned in 500 nm-thick resist layers and semi-dense gratings with line widths down to 10 nm (40 nm pitch) were patterned in 250 nm-thick resist layers. The dense HSQ nanostructures were used as molds for gold electrodeposition, and the semi-dense HSQ gratings were iridium-coated by atomic layer deposition. We used these methods to produce Fresnel zone plates with extreme aspect ratio for scanning transmission x-ray microscopy that showed excellent performance at 1.0 keV photon energy.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/21/28/285305

Additional details

Identifiers

DOI
10.1088/0957-4484/21/28/285305;
PII
S0957-4484(10)53509-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
21
Journal Issue
28
Journal Page Range
[6 p.]
ISSN
0957-4484