Published May 1996 | Version v1
Journal article

The capacitance of Pt/Pb0.65La0.28Ti0.96O3/Pt structures

  • 1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  • 2. Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6197 (United States)

Description

The capacitance/voltage characteristics of thin paraelectric lead lanthanum titanate films are measured using platinum electrodes. The films have a maximum capacitance when either a small positive or negative bias voltage is applied. This characteristic is consistent with the electrode interfaces acting as Schottky-like barriers. The voltage at which the capacitance maxima occur increases linearly with film thickness indicating that the film is highly resistive. On the basis of the high apparent film resistance it is proposed that the voltage dependence of the capacitance of the electrode interfaces arises from the ionization of deep level traps within the film and not from depletion layers associated with shallow donor or acceptor states. Application of voltages larger than about 2 endash 3 V results in the disappearance of the capacitance maxima indicating that irreversible changes in the electrode interfaces occur at higher electric fields. copyright 1995 American Institute of Physics

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
68
Journal Issue
21
Journal Page Range
p. 3043-3045.
ISSN
0003-6951
CODEN
APPLAB