The capacitance of Pt/Pb0.65La0.28Ti0.96O3/Pt structures
- 1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- 2. Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6197 (United States)
Description
The capacitance/voltage characteristics of thin paraelectric lead lanthanum titanate films are measured using platinum electrodes. The films have a maximum capacitance when either a small positive or negative bias voltage is applied. This characteristic is consistent with the electrode interfaces acting as Schottky-like barriers. The voltage at which the capacitance maxima occur increases linearly with film thickness indicating that the film is highly resistive. On the basis of the high apparent film resistance it is proposed that the voltage dependence of the capacitance of the electrode interfaces arises from the ionization of deep level traps within the film and not from depletion layers associated with shallow donor or acceptor states. Application of voltages larger than about 2 endash 3 V results in the disappearance of the capacitance maxima indicating that irreversible changes in the electrode interfaces occur at higher electric fields. copyright 1995 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 68
- Journal Issue
- 21
- Journal Page Range
- p. 3043-3045.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27074422
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; INTERFACES; LANTHANUM OXIDES; LEAD OXIDES; MIM JUNCTIONS; PLATINUM; SCHOTTKY BARRIER DIODES; TITANIUM OXIDES; TRAPS
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; RARE EARTH COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS