High-field magnetotransport properties of strained bismuth nanowires

We present results of galvano-magnetic measurements on glass-coated single bismuth nanowires under uniaxial strain at high magnetic field up to 30 T. Performed magnetotransport measurements are motivated by unusual electronic structure of bismuth which may be strongly modified by the magnetic field, where various types of high magnetic field induced instabilities may occur. By applying uniaxial stress we obtained the modification of wire electronic structure. As a result, the quantum limit for light and heavy electrons may be changed in a different way. For the case where heavy electrons are in the quantum limit a correlation between the exit of the last Landau level of light electrons and the Lifshitz Electronic Topological Transition was found out. (authors)