Published January 1, 2005 | Version v1
Journal article Metadata-only

Defect control in advanced high-mobility substrates

Creators

  • 1. E. E. Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)
  • 2. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

Description

This paper discusses the use of so-called high mobility substrates in association with defect generation and its impact on the electrical device parameters. The global or local strain engineering has to be optimized in order to avoid the harmful effects of stress-induced misfit and threading dislocations. (invited paper)

Availability note (English)

Available online at http://stacks.iop.org/1742-6596/10/125/jpconf5_10_031.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/1742-6596/10/125/jpconf5_10_031.pdf; http://www.iop.org/;
DOI
10.1088/1742-6596/10/1/031;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
10
Journal Issue
1
Journal Page Range
p. 125-130
ISSN
1742-6596

Conference

Title
2. conference on microelectronics, microsystems and nanotechnology
Dates
14-17 Nov 2004
Place
Athens (Greece)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36107929
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CONTROL; DISLOCATIONS; ENGINEERING; MOBILITY; STRAINS; STRESSES; SUBSTRATES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS