NixCd1−xO: Semiconducting alloys with extreme type III band offsets
Creators
- 1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
- 2. Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, California 94720 (United States)
- 3. Department of Physics and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China)
- 4. Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong)
Description
We have synthesized alloys of NiO and CdO that exhibit an extreme type III band offset and have studied the structural, electrical, and optical properties of NixCd1−xO over the entire composition range. The alloys are rocksalt structured and exhibit a monotonic shift of the (220) diffraction peak to higher 2θ angles with increasing Ni concentration. The electron mobility and electron concentration decrease with increasing x, and samples become insulating for Ni content x > 0.44. This decrease in n-type conductivity is consistent with the movement of the conduction band minimum from below to above the Fermi stabilization energy with increasing Ni content. The optical absorption edge of the alloys can be tuned continuously from CdO to NiO. The intrinsic gap of the alloys was calculated with the electrical and optical measurements and accounting for Burstein-Moss carrier filling and carrier-induced bandgap renormalization effects. We observe an uncommon composition dependence of the intrinsic bandgap on the alloy composition. The effect is tentatively attributed to an interaction between extended states of the conduction band and localized d-states of Ni
Additional details
Identifiers
- DOI
- 10.1063/1.4906088;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 2
- Journal Page Range
- p. 022110-022110.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46104806
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CADMIUM OXIDES; CHARGE CARRIERS; CONCENTRATION RATIO; D STATES; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; NICKEL; NICKEL OXIDES; N-TYPE CONDUCTORS; OPTICAL PROPERTIES; STABILIZATION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; MATERIALS; METALS; MOBILITY; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; SORPTION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC