Published January 12, 2015 | Version v1
Journal article

NixCd1−xO: Semiconducting alloys with extreme type III band offsets

  • 1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
  • 2. Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, California 94720 (United States)
  • 3. Department of Physics and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China)
  • 4. Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong)

Description

We have synthesized alloys of NiO and CdO that exhibit an extreme type III band offset and have studied the structural, electrical, and optical properties of NixCd1−xO over the entire composition range. The alloys are rocksalt structured and exhibit a monotonic shift of the (220) diffraction peak to higher 2θ angles with increasing Ni concentration. The electron mobility and electron concentration decrease with increasing x, and samples become insulating for Ni content x > 0.44. This decrease in n-type conductivity is consistent with the movement of the conduction band minimum from below to above the Fermi stabilization energy with increasing Ni content. The optical absorption edge of the alloys can be tuned continuously from CdO to NiO. The intrinsic gap of the alloys was calculated with the electrical and optical measurements and accounting for Burstein-Moss carrier filling and carrier-induced bandgap renormalization effects. We observe an uncommon composition dependence of the intrinsic bandgap on the alloy composition. The effect is tentatively attributed to an interaction between extended states of the conduction band and localized d-states of Ni

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
2
Journal Page Range
p. 022110-022110.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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