Published January 2016 | Version v1
Journal article

Microwave device jig characterization for ferromagnetic resonance induced spin Hall effect measurement in bilayer thin films

  • 1. CSIR-National Physical Laboratory, New Delhi (India)
  • 2. Department of Applied Physics, Delhi Technological University, Delhi (India)

Description

Microwave device jig for evaluating magnetic thin films consists of two symmetrical radial copper pad sections each having panel mounted RF connector. A non resonant measurement method for obtaining spin Hall voltage across magnetic thin films using ferromagnetic resonance was developed, based on electrical impedance of thin film and copper pads of the microwave device jig both in contact with each other. A geometry is introduced, which provides good impedance match characteristics and is optimised for maximum power transmission. It also gives the flexibility in measurements for any orientation of thin film with respect to applied magnetic field. In this geometry, a quantitative study of the microwave device jig has been done by measuring spin Hall voltages in the frequency range 0.1-10 GHz for bilayer thin films. The experimentally recorded voltages can be fully ascribed to SHE detection due to microwave induced FMR. (author)

Additional details

Publishing Information

Journal Title
Indian Journal of Pure and Applied Physics
Journal Volume
54
Journal Issue
1
Journal Page Range
p. 60-65
ISSN
0019-5596

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
52048330
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COATINGS; DEPOSITION; FERROMAGNETISM; HALL EFFECT; MICROWAVE EQUIPMENT; SUBSTRATES; THIN FILMS
Descriptors DEC
ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MAGNETISM