Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

The effect of the deposition temperature (200, 250, and 300 C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 C. However, a further increase to 300 C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)