A review of rapid thermal annealing (RTA) of B, BF2 and As ions implanted into silicon

RTA studies of B, BF2 and As implantations in silicon are reviewed. The optical coupling properties of the wafer are considered as a motive for obtaining accurate temperature assessment. Optical pyrometer techniques with feedback control are now commonly used. Enhanced diffusion of boron is widely reported for the channel tail in the several second time frame at proportional 10500C. Boron diffusion in preamorphized and crystalline silicon are compared, and dopant interactions (gettering) with residual disorder located just beyond the amorphous/crystalline (α/c) interface are discussed. The removal of residual α/c disorder from a 5 x 1015 As/cm2, 100 keV implant is shown to occur with proportional 5.0 eV energy, while a 'normal' concentration enhanced diffusion with proportional 4.0 eV activation energy is obtained including data in the second (RTA) time frames. Shallower defect free arsenic junctions are made using high temperature-short time cycles, rather than longer times at lower temperatures. The arsenic diffusion issues are discussed. (orig.)