Application of instrumental neutron activation analysis in Czochralski silicon crystal growth

Contamination sources of trace elements introduced into silicon crystals grown by the Czochralski technique are investigated: the single comparator method in neutron activation analysis is applied to the determination (As, Au, Co, Cr, Cu, Fe, Na, Sb, Zn) in a silica crucible of impurities, polycrystalline silicon, grown crystals and residual melt. When particular care is taken to avoid contamination during crystal growth, it is possible to obtain high purity silicon crystals in which impurity contents are almost below the detection limits of the analytical method. (author)