Published December 1, 2014 | Version v1
Journal article

A wide locking range and low DC power injection-locked frequency tripler for K-band application

  • 1. State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

Description

This paper presents a wide locking range and low DC power injection-locked frequency tripler for K-band frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 × 0.8 mm2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to 21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 mW of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/35/12/125008

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
35
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47014463
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CONTROL; ELECTRIC POTENTIAL; GHZ RANGE; INTEGRATED CIRCUITS; MHZ RANGE; NOISE; SEMICONDUCTOR MATERIALS; SIGNALS
Descriptors DEC
ELECTRONIC CIRCUITS; FREQUENCY RANGE; MATERIALS; MICROELECTRONIC CIRCUITS