Radiation induced optical absorption and radioluminescence in electron irradiated SiO2

Optical absorption and radioluminescence spectra from 2000 to 8000 A have been measured for two different types of SiO2 (Anhydroguide silica and KU1 quartz glass) irradiated at ionizing and displacement dose rates, and temperatures of relevance for ITER optical diagnostic components. Radioluminescence intensity has been quantified in terms of photon emission and shown to be up to two orders of magnitude less than that found earlier for high purity sapphire. Cherenkov radiation sets a lower limit on the radioluminescence intensity for these SiO2 materials. On the other hand optical absorption is considerably higher for the SiO2 materials than for sapphire. Considerable advantage may be obtained by operating these materials at about 300 C. (orig.)