Published August 15, 2009 | Version v1
Journal article

Atomistic simulation of the vacancy diffusion in (0 0 1) surface of MoTa alloy

  • 1. Department of Physics and Electronic Engineering, Weinan Teachers University, Weinan 714000, Shaanxi (China)
  • 2. College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China)
  • 3. State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian 710049, Shaanxi (China)
  • 4. ICMMO/LEMHE UMR 8182, Universite Paris-Sud 11, 91405 Orsay Cedex (France)

Description

The formation and diffusion of a single Mo or Ta vacancy in the (0 0 1) surface of the B2-type MoTa alloy have been investigated by using modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface on the vacancy is only down to the sixth layer. It is easier for the vacancy to form in the first layer. Comparing the migration energy of the vacancy migrating in the intra-layer, to the upper layer and to the nether layer via 2NN jump, we find that the vacancy in the first or second layer is preferred to migrate in intra-layer, and that in the third or fourth layer is favorable to migrate to the upper layer. Although 1NN jump will result in an anti-site so that a disorder in the order alloy, it may also occur due to the much lower migration energy especially for the vacancy in the second and third layer to migrate to the first and second layer, respectively.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2009.06.059

Additional details

Identifiers

DOI
10.1016/j.apsusc.2009.06.059;
PII
S0169-4332(09)00849-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
21
Journal Page Range
p. 8809-8815
ISSN
0169-4332
CODEN
ASUSEE

INIS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.