Atomistic simulation of the vacancy diffusion in (0 0 1) surface of MoTa alloy
Creators
- 1. Department of Physics and Electronic Engineering, Weinan Teachers University, Weinan 714000, Shaanxi (China)
- 2. College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China)
- 3. State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian 710049, Shaanxi (China)
- 4. ICMMO/LEMHE UMR 8182, Universite Paris-Sud 11, 91405 Orsay Cedex (France)
Description
The formation and diffusion of a single Mo or Ta vacancy in the (0 0 1) surface of the B2-type MoTa alloy have been investigated by using modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface on the vacancy is only down to the sixth layer. It is easier for the vacancy to form in the first layer. Comparing the migration energy of the vacancy migrating in the intra-layer, to the upper layer and to the nether layer via 2NN jump, we find that the vacancy in the first or second layer is preferred to migrate in intra-layer, and that in the third or fourth layer is favorable to migrate to the upper layer. Although 1NN jump will result in an anti-site so that a disorder in the order alloy, it may also occur due to the much lower migration energy especially for the vacancy in the second and third layer to migrate to the first and second layer, respectively.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.06.059Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.06.059;
- PII
- S0169-4332(09)00849-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 21
- Journal Page Range
- p. 8809-8815
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44017744
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; ATOMS; BINARY ALLOY SYSTEMS; DIFFUSION; LAYERS; MIGRATION; MOLYBDENUM COMPOUNDS; SIMULATION; SURFACES; TANTALUM COMPOUNDS; VACANCIES
- Descriptors DEC
- ALLOY SYSTEMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; POINT DEFECTS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.