Published December 1991 | Version v1
Journal article

Wafer-level radiation testing for hardness assurance

  • 1. Sandia National Labs., Albuquerque, NM (United States)
  • 2. L and M Technology, Albuquerque, NM (United States)
  • 3. Mission Research Corp., Albuquerque, NM (United States)

Description

This paper reports that, to implement the Qualified Manufacturers List (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2-μm radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
38
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1598-1607
ISSN
0018-9499
CODEN
IETNA

Conference

Title
Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference.
Dates
15-19 Jul 1991.
Place
San Diego, CA (United States).

Optional Information

Secondary number(s)
CONF-910751--.