Wafer-level radiation testing for hardness assurance
Creators
- 1. Sandia National Labs., Albuquerque, NM (United States)
- 2. L and M Technology, Albuquerque, NM (United States)
- 3. Mission Research Corp., Albuquerque, NM (United States)
Description
This paper reports that, to implement the Qualified Manufacturers List (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2-μm radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 38
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1598-1607
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference.
- Dates
- 15-19 Jul 1991.
- Place
- San Diego, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23054611
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; COST; DIAGRAMS; ELECTRIC CONDUCTIVITY; EQUIPMENT; FABRICATION; FREQUENCY DEPENDENCE; HARDNESS; INTEGRATED CIRCUITS; MANUFACTURERS; MHZ RANGE 01-100; RADIATION HARDENING; RESPONSE FUNCTIONS; STATISTICAL MECHANICS; TESTING; TRANSISTORS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; FREQUENCY RANGE; FUNCTIONS; HARDENING; INFORMATION; MECHANICAL PROPERTIES; MECHANICS; MHZ RANGE; PHYSICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Secondary number(s)
- CONF-910751--.