Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature

The evolution of sheet resistivity with the annealing temperature for implant-isolated n-type GaAs layers has been studied for a variety of ion species. Annealing characteristics of the isolated n-type GaAs layers implanted with different ions at RT, 100 or 200 deg. C were compared for each implant temperature. For the doses and energies used in this work, it is observed that protons and helium ions exhibit a pronounced enhanced dynamic annealing and offer excellent persistence of isolation to higher annealing temperatures for elevated temperature implantations. The actual carrier removal phenomenon in case of nitrogen and oxygen ions is thought to be a product of both damage related and chemically introduced isolation, which requires the implanted specie itself to be active as a trap centre. For hot implants, different trap structures are formed which in turn provide better resistivity values around these temperatures though the critical temperature may shift still higher, exhibiting persistence to thermal processes especially for light ion irradiation cases. The data presented in this work has ramifications for device engineers