Published December 1972
| Version v1
Journal article
Lumped-model analysis of semiconductor devices using the NET-2 circuit/system and analysis program
Creators
Description
Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a junction-isolated TTL gate. The TTL gate model was derived by the interconnection of detailed lumped models of each of the transistor elements. Calculated electrical switching response and photoresponse accurately simulated observed results.
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 19
- Journal Issue
- 6
- Series
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci.
- Journal Page Range
- 103-107
- ISSN
- 0018-9499
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 24 Jul 1972.
- Place
- Seattle, Washington, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4077250
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSIENTS
- Descriptors DEC
- RADIATION EFFECTS
Optional Information
- Notes
- See CONF-720707--.; Updated automatically by Metadata and Full-Text Enrichment Agent