Published December 1972 | Version v1
Journal article

Lumped-model analysis of semiconductor devices using the NET-2 circuit/system and analysis program

Description

Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a junction-isolated TTL gate. The TTL gate model was derived by the interconnection of detailed lumped models of each of the transistor elements. Calculated electrical switching response and photoresponse accurately simulated observed results.

Additional details

Identifiers

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
19
Journal Issue
6
Series
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci.
Journal Page Range
103-107
ISSN
0018-9499

Conference

Title
Annual conference on nuclear and space radiation effects.
Dates
24 Jul 1972.
Place
Seattle, Washington, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
4077250
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSIENTS
Descriptors DEC
RADIATION EFFECTS

Optional Information

Notes
See CONF-720707--.; Updated automatically by Metadata and Full-Text Enrichment Agent