Published February 1972
| Version v1
Journal article
The effect of radiation stability of semiconductors with stoichiometric vacancies
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Эффект радиационной устойчивости полупроводников со стехиометрическими вакансиями
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 14
- Journal Issue
- 2
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 646-648
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 3032609
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CADMIUM COMPOUNDS; CARRIER DENSITY; CARRIER MOBILITY; CATIONS; ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; GAMMA RADIATION; INDIUM COMPOUNDS; LOW TEMPERATURE; MONOCRYSTALS; POLYCRYSTALS; RADIATION EFFECTS; SELENIDES; SEMICONDUCTOR MATERIALS; TELLURIDES; TEMPERATURE DEPENDENCE; VACANCIES; VALENCE; ZINC SULFIDES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; INORGANIC PHOSPHORS; IONS; MOBILITY; PHOSPHORS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SULFIDES; ZINC COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Solid State; Published in summary form only.