Published May 7, 2014 | Version v1
Journal article

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

  • 1. Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States)
  • 2. Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

Description

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
17
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
55. annual conference on magnetism and magnetic materials
Dates
14-18 Nov 2010
Place
Atlanta, GA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45094990
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DIFFUSION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GRAPHENE; READOUT SYSTEMS; SEMICONDUCTOR RESISTORS; SPIN; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ANGULAR MOMENTUM; CARBON; CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; NONMETALS; PARTICLE PROPERTIES; RESISTORS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE

Optional Information

Notes
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