Features of the charge-transport mechanism in layered Bi2Te3 single crystals doped with chlorine and terbium
Creators
- 1. National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)
- 2. St. Petersburg State Polytechnic University (Russian Federation)
Description
The temperature dependences (T = 5−300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5−4.2 K) in Bi2Te3 single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi2Te3 with terbium atoms results in p-type conductivity and in increasing hole concentration. The doping of Bi2Te3 with chlorine atoms modifies also the character of its conductivity instead of changing only the type from p to n. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi2Te3 single crystals doped with chlorine is proposed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 1
- Journal Page Range
- p. 37-42
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43095001
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; CHARGE TRANSPORT; CHLORINE; DOPED MATERIALS; HALL EFFECT; LAYERS; MAGNETORESISTANCE; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TERBIUM
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HALOGENS; MATERIALS; METALS; NONMETALS; PHYSICAL PROPERTIES; RARE EARTHS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.