Comparative Studies on Temperature Dependent I-V Characteristics of Al/(p)CdTe and Ni/(n)CdS Schottky Junctions and Their PV Effect

Temperature dependent I-V characteristics of vacuum evaporated Al/(p)CdTe and Ni/(n)CdS Schottky junctions and their photovoltaic effects have been studied and compared. Different junction parameters such as ideality factors, barrier heights, Richardson's constant, short-circuit current density, fill factor, PV efficiency etc. were determined from their I-V characteristics. These parameters were found to change significantly on variation of temperature. The structures showed the change of PV effect. Efficiency found were 2.84% for Al/(p)CdTe and 4.44% for Ni hydro/(n)CdS. Polycrystalline nature, and continuous and ordered structure with bigger grain sizes of the CdS film shows more PV conversion efficiency in making Ni/(n)CdS junction as compare to Al/(p)CdTe junction. However these values were found to vary with doping concentration, and in hydrogen treated samples in both cases.