Published July 31, 1998 | Version v1
Journal article

Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures

  • 1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  • 2. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

Description

An investigation of the dynamics of catastrophic optical damage of a laser diode facet showed that the characteristic energy-evolution time of optical damage was 40-80 ns under pulsed operating conditions. When the pulse duration was less than this characteristic time, the damage was governed by the critical energy of a pulse. An estimate of the thickness of an overheated region gave less than 0.6 μm. (interaction of laser radiation with matter)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE1998v028n07ABEH001276

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
28
Journal Issue
7
Journal Page Range
p. 629-632
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42035041
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DAMAGE; LASER RADIATION; MIRRORS; PULSES; QUANTUM WELLS; RADIATION EFFECTS; SEMICONDUCTOR LASERS; THICKNESS
Descriptors DEC
DIMENSIONS; ELECTROMAGNETIC RADIATION; LASERS; NANOSTRUCTURES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS