Published July 31, 1998
| Version v1
Journal article
Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
- 1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
- 2. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
Description
An investigation of the dynamics of catastrophic optical damage of a laser diode facet showed that the characteristic energy-evolution time of optical damage was 40-80 ns under pulsed operating conditions. When the pulse duration was less than this characteristic time, the damage was governed by the critical energy of a pulse. An estimate of the thickness of an overheated region gave less than 0.6 μm. (interaction of laser radiation with matter)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE1998v028n07ABEH001276Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 28
- Journal Issue
- 7
- Journal Page Range
- p. 629-632
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42035041
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DAMAGE; LASER RADIATION; MIRRORS; PULSES; QUANTUM WELLS; RADIATION EFFECTS; SEMICONDUCTOR LASERS; THICKNESS
- Descriptors DEC
- DIMENSIONS; ELECTROMAGNETIC RADIATION; LASERS; NANOSTRUCTURES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS