Published May 2010 | Version v1
Journal article Metadata-only

High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

Creators

  • 1. Institute of Energy Research and Physical Technologies, Clausthal University of Technology, 38678 Clausthal-Zellerfeld (Germany)
  • 2. Institute of Nonmetallic Materials, Clausthal University of Technology, 38678 Clausthal-Zellerfeld (Germany)
  • 3. Institute of Chemistry, University of Magdeburg, 39106 Magdeburg (Germany)
  • 4. Institute of Materials Chemistry, Vienna University of Technology, 1210 Vienna (Austria)

Description

ZrO2 films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO2 films are stable against heating (up to 700 deg. C) in a moderate oxygen atmosphere (2x10-5 mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000 deg. C.

Additional details

Identifiers

DOI
10.1063/1.3340830;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
107
Journal Issue
9
Journal Page Range
p. 094103-094103.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069632
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL COMPOSITION; CRYSTAL STRUCTURE; INTERFACES; PARTIAL PRESSURE; PHOTOEMISSION; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON; SOL-GEL PROCESS; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY SPECTROSCOPY; ZIRCONIUM OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; FILMS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SECONDARY EMISSION; SEMIMETALS; SPECTROSCOPY; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS

Optional Information

Notes
(c) 2010 American Institute of Physics