Published May 22, 2006 | Version v1
Journal article

Novel displacement in transmission through a two-dimensional semiconductor barrier

  • 1. Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)
  • 2. Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China) and State Key Laboratory of Transient Optics Technology, Xi'an Institute of Optics and Precision Mechanics, Academia Sinica, 322 West Youyi Road, Xi'an 710068 (China)

Description

The lateral displacement of electron beams transmitting through a two-dimensional semiconductor barrier is quite different from the prediction from Snell's law for electron waves. It is shown that the displacement can be greatly enhanced by transmission resonance when the incidence angle is less than but close to the critical angle for total reflection. The displacement depends not only on the barrier's thickness but also on the incidence angle and the incidence energy. The influence of electron's effective mass is also discussed. Theoretical results of the stationary-phase approach are confirmed by numerical simulations for a Gaussian-shaped incident beam. These phenomena may lead to novel applications in quantum electronic devices

Additional details

Identifiers

DOI
10.1016/j.physleta.2006.01.023;
PII
S0375-9601(06)00058-2;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
354
Journal Issue
1-2
Journal Page Range
p. 161-165
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.