Published November 14, 2014 | Version v1
Journal article

Polaron effect dependence of thermopower in organic semiconductors

  • 1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)
  • 2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

A unified physical model for thermopower was presented in organic semiconductors, based on the Marcus theory and variable-range hopping theory. According to the proposed model, the characteristic of charge carrier thermoelectric transport in organic semiconductors has been investigated. In particular, polaron effects, energetic disorder, and carrier density dependence of the thermopower have been discussed in detailed. The calculation also shows a good agreement with the experimental data in organic semiconductors. - Highlights: • Polaron dependence of thermopower model in organic semiconductors was presented. • Thermopower decreases with the increase of polaron effect. • Thermopower increases with the increase of energetic disorder. • The model well explains the carrier density dependence of thermopower

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2014.10.032

Additional details

Identifiers

DOI
10.1016/j.physleta.2014.10.032;
PII
S0375-9601(14)01081-0;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
378
Journal Issue
48
Journal Page Range
p. 3579-3581
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47005662
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER DENSITY; CHARGE CARRIERS; ORGANIC SEMICONDUCTORS; POLARONS; THERMOELECTRICITY; TRANSPORT THEORY
Descriptors DEC
ELECTRICITY; MATERIALS; QUASI PARTICLES; SEMICONDUCTOR MATERIALS

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.