Published December 1985 | Version v1
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Localization in random binary alloys

  • 1. Oran Univ., Es Senia (Algeria). Inst. of Exact Sciences

Description

A self-consistent theory of localization is used to determine the mobility edges in random binary alloys. The model takes into account both diagonal and off-diagonal disorder. Extensive results are presented in the limit of low concentration and compared to other theories. In particular this model predicts the existence of a multitude of mobility edges in agreement with the data of Jonson et al. (author)

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
15 p.
Report number
IC--85/294

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
17064625
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALLOYS; BINARY ALLOY SYSTEMS; COMPARATIVE EVALUATIONS; CRYSTAL LATTICES; EIGENSTATES; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; PARTICLE MOBILITY; PERTURBATION THEORY; SELF-CONSISTENT FIELD; SELF-ENERGY
Descriptors DEC
ALLOY SYSTEMS; CRYSTAL STRUCTURE; ENERGY; EVALUATION; MOBILITY

Optional Information

Notes
12 refs, 3 figs, 2 tabs.