Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2x1013-5x1017 N/cm2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by a model. A comparison of model parameters for N and heavier ions yields insight in the different weights of defect production and interaction processes involved. A favoring influence of N on the defect stabilization and the amorphization is discussed. (orig.)