Published 2005
| Version v1
Journal article
Dependence of the band gap in the high-k dielectric HfO2 on crystalline phase
- 1. Corporate Manufacturing Engineering Center, Toshiba Corp., Kanagawa (Japan)
- 2. Fritz-Haber-Inst. der Max-Planck-Gesellschaft, Berlin (Germany)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 153
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36039121
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- BAND THEORY; CUBIC LATTICES; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; ENERGY GAP; HAFNIUM OXIDES; MANY-BODY PROBLEM; PERTURBATION THEORY; SELF-ENERGY; SPECTRAL SHIFT; TETRAGONAL LATTICES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY; HAFNIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS