A study of Si2N2O

The authors present a study to recover the structure of silicon oxinitride by thermal processes. Both I.R. and X Ray methods are used. The evolution of I.R. absorption bands intensity, half width and position of diffraction peaks display that no recovery of the structure can be reached when using a temperature below 7000C or when starting form a material which received an amorphising dose X ≥ 3.20 1020 n.cm-2. The recovery of the structure is obtained in the first two or three hours of heating. According to the experimental conditions used, the rehabilitation of the structure is not complete, and only a percentage of broken interatomic bonds are recreated, in connection with their degree of breaking