Published December 2018 | Version v1
Journal article Metadata-only

Performance of a new generation of micropixel avalanche photodiodes with high pixel density and high photon detection efficiency

Creators

  • 1. Joint Institute for Nuclear Research, Dubna (Russian Federation)
  • 2. Azerbaijan National Academy of Sciences-AD and İRP, Baku (Azerbaijan)
  • 3. National Nuclear Research Centre of MCHT, Baku (Azerbaijan)
  • 4. Azerbaijan State Oil and Industrial University, Baku (Azerbaijan)

Description

Performance of a new generation of micropixel avalanche photodiodes of MAPD-3NK type from Zecotek Photonics as a function of the bias voltage has been studied at the temperature range from –116 °C to 20 °C. The temperature coefficient of the breakdown voltage for this device is 58 ± 3mV/∘C. Photon detection efficiency of the MAPD-3NK has been compared with that of a similar device (serial number: S12572-010P) from Hamamatsu Photonics at the temperature of –27 °C. Both photodiodes have the same pixel density of 10,000 pixel/mm2. The photon detection efficiency of 5 ± 0.3% and 40 ± 2% was measured at the same overvoltage of 3 V for the S12572-010P and the MAPD-3NK, respectively.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2017.12.006

Additional details

Identifiers

DOI
10.1016/j.nima.2017.12.006;
PII
S0168900217313608;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
912
Journal Page Range
p. 320-322
ISSN
0168-9002
CODEN
NIMAER

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53039589
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BREAKDOWN; COMPARATIVE EVALUATIONS; DETECTION; EFFICIENCY; ELECTRIC POTENTIAL; FUNCTIONS; OVERVOLTAGE; PERFORMANCE; PHOTODIODES; PHOTOMULTIPLIERS; PHOTONS; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
BOSONS; ELEMENTARY PARTICLES; EVALUATION; MASSLESS PARTICLES; PHOTOTUBES; REACTIVITY COEFFICIENTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2017 Elsevier B.V. All rights reserved.