Published January 2007 | Version v1
Journal article Metadata-only

The effect and mechanism of the bipolar junction transistor in different temperature

Creators

  • 1. Chinese Academy of Sciences, Urumqi (China). Xinjiang Technical Inst. of Physics
  • 2. Changsha Univ. of Technology, Changsha (China)

Description

The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
27
Journal Issue
1
Journal Page Range
p. 150-153
ISSN
0258-0934

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
39039240
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ANNEALING; JUNCTION TRANSISTORS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
Descriptors DEC
HEAT TREATMENTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
2 figs., 15 refs.