Published September 1977 | Version v1
Journal article

Ion implantation of semiconductor devices

Creators

  • 1. Philips Research Labs., Redhill (UK). Solid State Physics Div.

Description

The impact of ion implantation on the semiconductor industry is assessed and the advantages of the technique considered. The main applications of ion implantation are considered under two headings: the substitution of implantation for diffusion using the technique simply as a source of dopant atoms, and the use of particular unique features of implantation to make improved device structures. It is shown that the impact of ion implantation is not seen simply in current device catalogues, but in devices under development and in an increasing understanding of the solid state. (U.K.)

Additional details

Identifiers

Publishing Information

Journal Title
Physics Bulletin
Journal Volume
28
Journal Issue
9
Series
Phys. Bull. (London).
Journal Page Range
416-418
ISSN
0031-9112

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
8341543
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRICAL PROPERTIES; ION IMPLANTATION; PERFORMANCE; REVIEWS; SEMICONDUCTOR DEVICES
Descriptors DEC
DOCUMENT TYPES; PHYSICAL PROPERTIES

Optional Information

Notes
Updated automatically by Metadata and Full-Text Enrichment Agent