Published September 1977
| Version v1
Journal article
Ion implantation of semiconductor devices
Description
The impact of ion implantation on the semiconductor industry is assessed and the advantages of the technique considered. The main applications of ion implantation are considered under two headings: the substitution of implantation for diffusion using the technique simply as a source of dopant atoms, and the use of particular unique features of implantation to make improved device structures. It is shown that the impact of ion implantation is not seen simply in current device catalogues, but in devices under development and in an increasing understanding of the solid state. (U.K.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Bulletin
- Journal Volume
- 28
- Journal Issue
- 9
- Series
- Phys. Bull. (London).
- Journal Page Range
- 416-418
- ISSN
- 0031-9112
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 8341543
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRICAL PROPERTIES; ION IMPLANTATION; PERFORMANCE; REVIEWS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- DOCUMENT TYPES; PHYSICAL PROPERTIES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent