Published 2003
| Version v1
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About the possible formation of temporary auto-waves in semiconductors with intense recombinational-stimulated forming of defects
Creators
- 1. Physical-Technical Institute AS RU, NPO 'Physics-Sun', Tashkent (Uzbekistan)
Description
no abstract available
Files
39121182.pdf
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Additional details
Additional titles
- Original title (Russian)
- О возможности развития временных автоволн в полупроводниках с интенсивным рекомбинационно-стимулированным дефектообразованием
Publishing Information
- Publisher
- Fiziko-tekhnicheskij institut, NPO 'Fizika-Solntse'
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of the conference 'Fundamental and applied problems of physics'
- Imprint Pagination
- 494 p.
- Journal Page Range
- p. 292-294
- Report number
- INIS-UZ--133
Conference
- Title
- Conference on Fundamental and applied problems of physics consecrated to 60th anniversary of the Academy of Sciences of Uzbekistan and Physical-Technical Institute
- Original Conference Title
- Konferentsiya 'Fundamental'nye i prikladnye voprosy fiziki' posvyashchennaya 60--letiyu Akademii Nauk Respubliki Uzbekistan i Fiziko-Tekhnicheskogo Instituta
- Dates
- 27-28 Nov 2003
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 39121182
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- A CENTERS; BERNSTEIN MODE; DOPED MATERIALS; EDGE DISLOCATIONS; H CENTERS; I CENTERS; LATTICE VIBRATIONS; MAGNETIC SEMICONDUCTORS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SCHOTTKY DEFECTS
- Descriptors DEC
- COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; INTERSTITIALS; LINE DEFECTS; MATERIALS; OSCILLATION MODES; POINT DEFECTS; SEMICONDUCTOR MATERIALS; VACANCIES
Optional Information
- Notes
- 1 ref. Imprint:Trudy konferentsii 'Fundamental'nye i prikladnye voprosy fiziki'